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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11A DESCRIPTION *High Voltage *High Speed Switching APPLICATIONS *Converters *Inverters *Switching regulators *Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 1000 450 7 5 10 2 100 150 -65~150 UNIT V V V A A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0, L= 25mH IC= 2.5A; IB= 0.5A IC= 2.5A; IB= 0.5A VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=125 VEB= 9V; IC= 0 IC= 5mA ; VCE= 5V IC= 0.5A ; VCE= 5V 10 10 MIN 450 BUT11A TYP. MAX UNIT V 1.5 1.3 1 2 10 35 35 V V mA mA Switching Times ;Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 2.5A;IB1= -IB2= 0.5A 1.0 4.0 0.8 s s s isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11A isc Websitewww.iscsemi.cn |
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